The implementation of broadband monolithic baluns based on CMOS technology is investigated. The configuration and parameterized layout are analyzed. Then,a wide-band lumped element equivalent circuit model accounting for all necessary physical effects is proposed and model parameters are extracted, with high accuracy in a broadband frequency range ,via combination of physical formula and fitting optimization. Two baluns were implemented with TSMC＇s one-poly eight-metal （1P8M） 0.13μm mixed-signal （MS）/RF CMOS process. The S-parameters of these two baluns were measured using a vector network analyzer. The measured results agree well with the modeled parameters up to millimeter-wave frequencies.
A low power 433 MHz CMOS （complementary metal- oxide-semiconductor transistor） low noise amplifier（LNA）, used for an ISM （ industrial-scientific-medical ） receiver, is implemented in a 0. 18 μm SMIC mixed-signal and RF （ radio frequency） CMOS process. The optimal noise performance of the CMOS LNA is achieved by adjusting the source degeneration inductance and by inserting an appropriate capacitance in parallel with the input transistor of the LNA. The measured results show that at 431 MHz the LNA has a noise figure of 2.4 dB. The S21 is equal to 16 dB, S11 = -11 dB, S22 = -9 dB, and the inverse isolation is 35 dB. The measured input 1-dB compression point （PtdB） and input third-order intermodulation product （IIP3）are - 13 dBm and -3 dBm, respectively. The chip area is 0. 55 mm × 1.2 mm and the DC power consumption is only 4 mW under a 1.8 V voltage supply.
