以益阳地区某木材加工厂的废弃生物质杉木屑为原料,对其进行真空化学活化。活性炭产物微孔结构发达,微孔体积占总孔体积的90.02%;根据IUPAC(International Union of Pure and Applied Chemistry)分类,其对氮气的吸附等温线属于典型的I型吸附等温线,可以使用Langmiur方程描述;吸附平衡常数为2.70 kPa-1;标准状态下的饱和吸附量为360.81 cm3.g-1。
The formation of self assembled CdSe quantum dots under Stranski Krastanow (S K) mode by low pressure metalorganic chemical vapor deposition (LP MOCVD) was reported for the first time. The samples were grown directly on GaAs (100) surfaces by LP MOCVD. DimethylSelenide (DMSe) and DimethylCadmium (DMCd) were used as precursors. The growth pressure was kept at 2 93×10 4Pa and the growth temperature was 500℃. CdSe with the thickness of about 2 monolayers was grown directly on GaAs (100) surfaces. For the purpose of AFM observation, this uncapped sample was cooled down immediately to room temperature and was monitored under a Digital Instruments Nanoscope Ⅲa system at the same day of growth. The AFM images show that the average diameter, height and density of those self assembled CdSe quantum dots are 50±15nm, 13±4nm and 5μm -2 , respectively. And those dots’ diameter height ratio is about 4～5, just the same as those results observed in other Ⅱ Ⅵ and Ⅲ Ⅵ compounds which were grown under S K mode by MBE.
