Copper indium diselenide nanorod arrays were electrodeposited on tungsten/silicon rigid substrates using porous anodic alumina as growth template. The porous anodic alumina templates were prepared by anodizing aluminum films which were sputtered onto the tungsten/silicon substrates. A selective chemical etching was used to penetrate the barrier layer at the bottom of the alumina channels before electrodeposition, which enables direct electrical and chemical contact with the underside substrate electrode. The as-deposited samples were annealed at 450 ℃ in vacuum. Scanning electron microscopy revealed that the nanorods were dense and compact with diameter of about 100 nm, length of approximate 1 um, and the aspect ratio of 10. X-ray diffraction, micro-Raman spectroscopy, and high resolution transmission electron microscopy showed that chalcopyrite polycrystalline structure and high purity CuInSe2 nanorods were obtained. The grain size was large in the rod axial direction. Energy-dispersive X-ray spectroscopy showed the composition was nearly stoichiometric. The energy band gap of this nanorod arrays was analyzed by fundamental absorption spectrum and was evaluated to be 0.96 eV.
