The generalized successive overrelaxation （GSOR） method was presented and studied by Bai, Parlett and Wang [Numer. Math. 102（2005）, pp.1-38] for solving the augmented system of linear equations, and the optimal iteration parameters and the corresponding optimal convergence factor were exactly obtained. In this paper, we further estimate the contraction and the semi-contraction factors of the GSOR method. The motivation of the study is that the convergence speed of an iteration method is actually decided by the contraction factor but not by the spectral radius in finite-step iteration computations. For the nonsingular augmented linear system, under some restrictions we obtain the contraction domain of the parameters involved, which guarantees that the contraction factor of the GSOR method is less than one. For the singular but consistent augmented linear system, we also obtain the semi-contraction domain of the parameters in a similar fashion. Finally, we use two numerical examples to verify the theoretical results and the effectiveness of the GSOR method.
Halo structure is added to sub-100 nm surrounding-gate metal-oxide-semiconductor fieldeffect-transistors （MOS- FETs） to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson＇s equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.
