Neodymium and manganese doped BiFeO_(3)-(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)(BNFMO)ferro-electric film and HfO_(2)layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition(ALD)method,respectively.Metal ferroelectric-insulator-semiconductor(MFIS)capacitors with 200 nm thick BNFMO and 5 nm thick HfO_(2)layer on silicon substrate have been prepared and characterized.It is found that there is no distinct interdifusion and reaction occurring at the interface between BNFMO/HfO_(2)and HfO_(2)/Si.The capacitance-voltage(C-V)and leakage current properties of Pt/HfO_(2)/Si capacitors with different HfO_(2)thickness were studied.The MFIS structure showed clockwise C-V hysteresis loops due to the ferroelectric polarization of BNFMO.The maximum memory window is 5 V.The.leakage current of the Pt/BNFMO/HfO_(2)/Si capacitor was about 2.1×10^(-6)A/cm^(2)at an applied voltage of 4V.
