Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter's theory(carrier number fluctuation),low-frequency noise in the sub-threshold regime agrees with McWhorter's theory for PMOS transistors while it agree with Hooge's theory(carrier mobility fluctuation) in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^(17) and 3.56×10^(18) cm^(-3)/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge's parameters are 2.42×10^(-5) and 4×10^(-4).By consideration of BSIM compact model,it is shown that two noise parameters(NOIA and NOIB) can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^(17) cm^(-3)/eV and 9.31×10^(-4) V^(-1).But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^(18) cm^(-3)/eV and 1.53×10^(-2) V^(-1).Good agreement between simulation and experimental results is achieved.
AlGaN/GaN high electron mobility transistors(HEMTs) were irradiated by 256 Me V127 I ions with a fluence up to1×1010ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current I d and the gate current I g increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current,and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.
