A 2GHz power amplifier realized in IBM 5PAe 0.35t.tm SiGe BiCMOS technology is reported. This amplifier was implemented in a two-stage single-ended structure. All components except choking inductors were integrated on-chip. Full-frequency stability was achieved using serial resistors between the bases of the transistors and matching inductors. The off-chip test proved the stability under all the supplied voltages. At Vc = 3.5V, VB = 6V, the small signal gain was 20.8dB, the input and output reflectance was less than - 17 and - 16dB, respectively, and the Pout.2dB was about 24dBm. At the out- put power of 25. ldBm,the PAE was about 21.5% ,and the second and third harmonics were less than - 45 and - 52dBc, respectively. This insures the linearity of the circuits.
