Mg of Gap doping characteristics in MOCVD have been studied by using SIMS (Secondary Ion Mass Spectrometry) measurement. The experimental results show that the Mg incorporation is considered to be limited by Mg revaporization from the growth surface under the higher temperature and the Mg electrical activity decreases with increasing cP2Mg flow-rate. The activation energy of Mg in GaP is also respectively obtained.
With the development of deep submicron integrated circuits (IC), copper metallization has been a replacement for conventional aluminum metallization in high density IC manufacture. But Cu is quite mobile in Si and has poor adhesion to Si or SiO2, which could degrade the performance of copper interconnect. Therefore, a diffusion barrier layer between copper interconnect and Si device is necessary. In this paper, Ta-based barrier layers are deposited on Si substrate with deposition technology of magnetron sputtering. The depth profile of copper interconnect and Ta-diffusion barrier layer are investigated by second ion mass spectrometry(SIMS).
