A programmable multi-modulus frequency divider is designed and implemented in a 0. 35μm CMOS process. The multi-modulus frequency divider is a single chip with two dividers in series,which are divided by 4 or 5 prescaler and by 128-255 multi-modulus frequency divider. In the circuit design, power and speed trade-offs are analyzed for the prescaler, and power optimization techniques are used according to the input frequency of each divider cell for the 128-255 multimodulus frequency divider. The chip is designed with ESD protected I/O PAD. The dividers chain can work as high as 2.4GHz with a single ended input signal and beyond 2.6GHz with differential input signals. The dual-modulus prescaler consumes 11mA of current while the 128-255 multi-modulus frequency divider consumes 17mA of current with a 3.3V power supply. The core area of the die without PAD is 0.65mm × 0.3mm. This programmable multi-modulus frequency divider can be used for 2.4GHz ISM band PLL-based frequency synthesizers. To our knowledge, this is the first reported multi-modulus frequency divider with this structure in China.
By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab- ricated. The fmax is the highest value for HEMTs in China. Also, the devices are reported, including the device structure, the fabrication process, and the DC and RF performances.
