This paper investigates the capacitance-voltage(C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure.The F doping SiCOH films are deposited by decamethylcyclopentasiloxane(DMCPS) and trifluromethane(CHF3) electron cyclotron resonance plasmas.With the CHF3/DMCPS flow rate ratio from 0 to 0.52,the positive excursion of C-V curves and the increase of flat-band voltage VFB from 6.1 V to 32.2 V are obtained.The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations,and the increase of F concentration.At the CHF3/DMCPS flow rate ratio is 0.12,the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0 V.
Structure properties of silicone oil serving as a liquid substrate exposed to Ar plasma are investigated in this paper.Under the action of energetic Ar ions,the surface of silicone oil liquid substrate exhibits a branch-like fractal aggregation structure,which is related to the structure evolution of silicone oil liquid from Si-O chain to Si-O network.The radicals from the dissociation of silicone oil molecule into the Ar plasma turns the plasma into a reactive environment.Therefore,the structural evolution of silicone oil liquid substrate and the reactive radicals in the plasma space become possible factors to affect the aggregation of nanoparticles and also the structures and the compositions of nanoparticles.
Effect of low-frequency power on F, CF_2 relative density and F/CF_2 ratio, inC_2F_6, C_4F_8 and CHF_3 dual-frequency capacitively couple discharge driven by the power of13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF_2 relativedensity and high F/CF_2 ratio were obtained in a CHF_3 plasma. But for C_2F_6 and C_4F_8plasmas, the F, CF_2 relative density and F/CF_2 ratio all decreased significantly due to the differencein both reactive paths and reactive energy. The increase of LF power caused simultaneousincrease of F and CF_2 radical relative densities in C_4F_8 and CHF_3 plasmas, but led to increaseof F with the decrease in CF_2 relative densities in C_2F_6 plasma due to the increase of lower energyelectrons and the decrease of higher energy electrons in electron energy distribution function(EEDF).
